High-speed switch with accelerated switching time

ABSTRACT

A method and apparatus is disclosed for maintaining a stable power supply to a circuit when activating/deactivating a switch in order to accelerate the switching time of the switch. The gate of a FET is coupled to a switch driver. The switch driver is powered by a positive power supply and a negative power supply. When the switch is to be activated/deactivated, the gate is first coupled to a reference potential (i.e., ground) for a “reset period” to reduce any positive/negative charge that has been accumulated in the FET. At the end of the reset period, the gate is then released from the reference potential and the switch driver drives the gate to the desired voltage level to either activate or deactivate the switch.

CROSS REFERENCE TO RELATED APPLICATIONS—CLAIM OF PRIORITY

This application is a continuation of commonly owned and co-pending U.S.application Ser. No. 16/703,537, filed Dec. 4, 2019, entitled“High-Speed Switch with Accelerated Switching Time”, the disclosure ofwhich is incorporated herein by reference in its entirety. ApplicationSer. No. 16/703,537 is a continuation of commonly owned U.S. applicationSer. No. 15/659,311, filed Jul. 25, 2017, entitled “High-Speed Switchwith Accelerated Switching Time”, now U.S. Pat. No. 10,511,297 issuedDec. 17, 2019, the disclosure of which is incorporated herein byreference in its entirety.

BACKGROUND Technical Field

This disclosure generally relates to switches and more specifically tohigh-speed switches for switching radio frequency and other electronicsignals.

Background

A growing demand for switches having ever-greater power handlingcapability has created an increased reliance on large switches. In somecases, such switches are implemented using a number of stacked fieldeffect transistors. One example of a situation that requires the use oflarge switches is found in transceivers. A receive/transmit (R/T) switchallows one antenna to be used for both transmissions and reception.

FIG. 1 is a simplified schematic showing an example of a multiportswitch, such as a three-port switch 100. The three-port switch 100 hasthree ports, a first port 101, a second port 104 and a third port 118.Four switch control signals are applied to four respective switchcontrol ports 106, 107, 109, 111. The switch control signals control theconfiguration of four switch branches 108, 110, 112, 114 within thethree-port switch.

The first switch branch 108 is coupled between the first port 101 andthe second port 104. The second switch branch 110 is coupled between thesecond port 104 and ground. The third switch branch 112 is coupledbetween the first port 101 and the third port 118. The fourth switchbranch 114 is coupled between the third port 118 and ground.

When the three-port switch 100 is in a first mode, a “Sw. 1 Control”signal applied to the first switch control port 106 causes the firstswitch branch 108 to close, creating a path from the first port 101 tothe second port 104. In addition, a “Sw. 2 Control” signal applied tothe second switch control port 107 causes the second switch branch 110to open. Therefore, the first port 101, the path from the second port104 through the second switch branch 110 to ground is opened.Concurrently, a “Sw. 3 Control” signal applied to the third switchcontrol port 109 causes the third switch branch 112 to open,disconnecting the first port 101 from the third port 118. Furthermore, a“Sw. 4 Control” signal applied to the fourth control signal port 111causes the fourth switch branch 114 to close, thus coupling the thirdport 118 to ground. Thus, in the first mode the first port 101 iscoupled to the second port 104 and the third port 118 is shunted toground, thus isolating the third port 118 from the first and secondports 101, 104.

In some cases, the switches need to be capable of handling the highpower signals, requiring switches having relatively high stacking (i.e.,relatively large number of “stacked FETs”). A “stacked FET” comprises atleast two FETs having the source or drain of a preceding FET connectedto the source or drain of a subsequent FET, thus placing the FETs inseries, each FET being controlled by essentially the same gate signalthrough gate resistors associated with each FET, such that all of theFETs of the stack turn on and off together. The total width of each FETin the stack is typically increased to compensate for increases in theON resistance (R_(on)) that would otherwise occur due increasing thenumber of series FETs. Increasing the total width of each FET helpsmaintain an overall low R_(on) when the FETs are switched on. In somecases, the drain and source of the FETs used to implement the stackedFET switches are interchangeable. The increased parasitic capacitance ofthe gates when the FETs are stacked results in an increase in switchingtime (i.e., the amount of time between a signal transition at the gateof the FETs and the resulting change in impedance between the source anddrain of those FETs). Switching time is an important performanceparameter for some switches, such as receive/transmit (R/T) switches andothers. For switches capable of handling high power signals, theswitching time increases due to capacitive loading at the outputs of thedrivers that switch the FET gates. This is discussed in further detailbelow.

FIG. 2 is a more detailed schematic of switch branch 112 of FIG. 1. Theswitch branch 112 shown in FIG. 2 is representative of one way theswitch branches 108, 110, 112, 114 of the switch 100 may be implemented.It should be understood that not all of the switch branches 108, 110,112, 114 need to be implemented the same way. It should also beunderstood that FIG. 2 is a simplified schematic of the switch branch112.

In some cases, the switch branch 112 is implemented using a stacked FETstructure 301 (hereafter referred to simply as “FET 301”). A switchdriver 305 can be provided to control the gate of the FET 301 andselectively turn the switch branch 112 on or off. The switch driver 305is powered by a +3v power supply V_(DD) and a −3v power supply V_(SS).The input to the switch driver 305 determines whether the FET 301 isconducting or not (i.e., whether the switch is open or closed). In thecase of an NMOS FET, a positive voltage applied to the gate of the FET301 will turn the FET 301 on and thus allow a current to flow betweenthe drain and the source. Applying a negative voltage to the gate of theFET 301 turns the FET 301 off. Accordingly, little or no current flowsfrom the drain to the source.

FIG. 3 is a graph showing the ideal operation of the switch branch 112.Depicted in FIG. 3 is a voltage level 401 of a signal 303 applied to thegate of the FET 301, such as the stacked FET used to implement theswitch branch 112 (see FIG. 2) within the three-port switch 100 (seeFIG. 1). Also shown is a voltage level 403 of a −3 volt power supplyV_(SS) used to provide power to the driver 305 of the switch branch 112.

When a switch control signal 109 (see FIG. 2) changes state, the outputof the driver 305 changes state. Ideally, the gate voltage 401 of theFET 301 starts at a level equal to the voltage of the V_(DD) powersupply. In response to the change in state, the gate voltage 401 ispulled from +3v to −3v by the driver 305. Upon crossing through thethreshold (i.e., the turn off voltage) of the FET 301, the FET 301ceases conducting, thus turning off the switch branch 112. In theexample shown, the voltage V_(DD) is +3v and the voltage V_(SS) is −3v.

At time t₁, control signal 303 initiates FET 301 turning off. However,there is a delay between the time the signal 303 starts to drop and thetime the switch branch 112 turns off (i.e., time t₂). If V_(SS) holdsrelatively steady at −3v, the “turn off time” of the FET 301 isrelatively fast. However, with a stacked FET 301 having a relativelylarge parasitic capacitance, the amount of charge necessary to turn offthe stacked FET 301 is substantial. That is, the amount of charge thatmust be removed from the gate of the FET 301 can present a substantialload to the driver 305.

FIG. 4 illustrates that the voltage of V_(SS) can raise in response tothe large transfer of charge at the output of the driver 305 by thecharge present at the gate of the FET 301 (i.e., due to the storedcharge in the FET 301). In some cases, the effect of the loading at theoutput of the driver 305 is more prevalent when trying to pull the gateof the FET 301 to −3v to turn the FET 301 off than it is when trying topull the gate up to +3v to turn the FET 301 on. This is due to therelative “weakness” of the −3v source compared to the relative strengthof the +3 volt source. That is, in some cases in which the −3v V_(SS)has been generated from the 3v V_(DD) by a circuit fabricated on thesame integrated circuit as the FET 301, the voltage source V_(SS) isconsidered to be weak, since it is not able to maintain a stable −3 voltoutput in the face of the relatively large charge at the gate of the FET301. However, this effect can occur both when attempting to turn the FET301 on as well as when attempting to turn the FET 301 off. The result ofthe load at the output of the driver 305 is that the FET 301 is slow toturn off due to the rise in the level of V_(SS). It can be seen in FIG.4 that the FET 301 turns off at time t₂′. The turn off time (i.e., timebetween t₁and t₂′) when V_(SS) rises (as shown in FIG. 4) issubstantially longer than turn on time if V_(SS) remains unchanged (asshown in FIG. 3), since the gate voltage reaches the desired V_(SS)slower.

Accordingly, it can be seen that an important factor in determining howlong it takes for the FET 301 to turn off is the size of the FET 301(both number of stacked FETs and the dimensions of each of the FETs),the amount of charge that needs to be drained from the FET 301 throughthe gate and the effect that charge has on V_(SS).

Therefore, there is a need to mitigate the loading effect in order toimprove the switching time as well as voltage source settling time forswitches capable of switching signals having high power levels.

SUMMARY

A method and apparatus is disclosed for maintaining a stable powersupply to a circuit when activating/deactivating a switch, such as amultiport switch, in order to reduce the switching time of the switch.In some embodiments of the disclosed method and apparatus, the switch isimplemented using at least one field effect transistor (FET). The gateof the FET is coupled to a switch driver. The switch driver is poweredby a positive power supply and a negative power supply. When the switchis to be activated/deactivated, the gate is first coupled to a referencepotential (ground for example) for a “reset period” to reduce anypositive/negative charge that has been accumulated on the gate of theFET. At the end of the reset period, the gate is then released from thereference potential and the switch driver drives the gate to the desiredvoltage level to either activate or deactivate the switch. By“resetting” the FET to the reference potential between V_(DD) and V_(SS)(e.g., ground) before allowing the switch driver to drive the gate ofthe FET, the effect of loading the power supply is minimized. Minimizingthe effect on the power supply speeds up the switching time of theswitch. The gate may be driven to any intermediate voltage potentialbetween the negative and positive voltage potentials provided as theswitch driver power supply voltages in order to reduce the load on theinput of the switch driver during transitions of the switch from open toclosed.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the invention will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified schematic showing an example of a three-portswitch.

FIG. 2 is a more detailed schematic of a switch branch of FIG. 1 andFIG. 2.

FIG. 3 is a graph showing the ideal operation of one switch branch.

FIG. 4 illustrates that the voltage of V_(SS) can raise in response tothe large load presented at the output of the driver by the capacitanceat the gate of the FET.

FIG. 5 is a simplified three-port switch in accordance with someembodiments of the presently disclosed method and apparatus.

FIG. 6 is a simplified schematic of a switch branch in accordance withsome embodiments of the disclosed method and apparatus.

FIG. 7 is a timing diagram illustrating the relative timing of thesignals coupled to the switch control input of a switch branch and thereset control input of a reset circuit within the switch branch.

FIG. 8 is an illustration of the positive impact of resetting the gateof a FET.

FIG. 9 shows plots of the logical state of the switch control signal,the reset switch control signal, the series reset switch and the shuntreset switch.

FIG. 10 is an illustration of a method in accordance with someembodiments of the disclosed method and apparatus.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 5 is a simplified schematic of a multiport switch, and moreparticularly, a three-port switch 600 in accordance with someembodiments of the presently disclosed method and apparatus. However, itwill be understood that the three-port switch 600 is provided merely asan example of one embodiment of the disclosed method and apparatus andthat the multiport switch may take any form.

The three-port switch 600 has four switch branches 608, 610, 612, 614.In some embodiments, a reset processor 603 is coupled to reset controlport 710 of each of the four switch branches 608, 610, 612, 614. Onlythe connection between the reset processor 603 and the switch branch 612is shown in FIG. 5 for the sake of simplicity in the figure.Alternatively, the reset control signal is coupled to less than all ofthe switch branches 608, 610, 612, 614. In addition, in someembodiments, a corresponding one of four, three-port switch controlsignals is coupled to an associated one of the four switch branches 608,610, 612, 614 to control when the switch branch is open or closed.

FIG. 6 is a simplified schematic of the switch branch 612. In someembodiments, one or more of the other switch branches 608, 610, 612, 614are implemented as shown in FIG. 6, however, for the sake of thisdiscussion, the switch shown in FIG. 6 is referred to as switch 612. Theswitch 612 comprises a switch control input 702, reset control input710, a stacked FET 301 (hereafter referred to as “FET 301”), a switchdriver 305, and a reset circuit 704. The input of the switch driver 305is coupled to the switch control input 702. In some embodiments, theswitch driver 305 is powered by a positive power supply V_(DD) and anegative power supply Vss. In some embodiments, V_(DD)=3v andV_(SS)=−3v.

The reset circuit 704 is shown in the “inactive” state in which a seriesswitch 706 is closed and a shunt switch 708 is open. In an “active”state, the series switch 706 is open and a shunt switch 708 is closed.The reset control input 710 is coupled to the reset circuit 704 and tothe reset processor 603. Signals coupled to the reset control input 710are generated by the reset processor 603. In some embodiments, the resetprocessor 603 and at least one switch branch reside within the samepackage and may be formed on the same substrate. Alternatively, thereset processor 603 resides in a separate package and/or is formed on aseparate substrate from one or more of the switch branches 608, 610,612, 614. Accordingly, in some embodiments, not all of the switches 608,610, 612, 614 are fabricated on the same substrate and housed within thesame package.

A reset control signal coupled to the reset control input 710 determineswhether the reset circuit 704 is active or inactive. In someembodiments, the switch control 3 signal that is coupled to the switchcontrol input 702 is also coupled to the reset processor 603 to triggerthe generation of the reset control signal. The switches 706, 708 withinthe reset circuit 704 can be implemented as relatively small and fastFETs, since they are only used to reset the gate voltage of the FET 301.That is, resetting the FET 301 does not require a significant voltagehandling capability, nor is a large amount of current passed through theseries switch 706 and the shunt switch 708.

FIG. 7 is a timing diagram illustrating the relative timing of thesignals coupled to the switch control input 702 and the reset controlinput 710. A first plot 802 shows the state of the switch control signalcoupled to the switch control input 702. A second plot 804 shows thestate of the reset switch control signal coupled to the reset controlinput 710. A third plot 806 shows the state of the series reset switch706. A fourth plot 808 shows the state of the shunt reset switch 708.

The signals are coordinated in time by the reset processor 603, suchthat each time the switch control signal 802 presented at the switchinput 702 changes state (e.g., in some embodiments, when the signal goeslow), the reset control signal 804 presented to the reset control input710 will deliver a pulse from the high to low and back to high. Thereset control signal activates the reset circuit 704 during a “resetperiod” and then deactivates the reset circuit 704 at the end of thereset period. The reset processor 603 can be implemented by aprogrammable device (such as a microprocessor), hardware, a statemachine or any other well-known mechanism for generating a pulse upondetecting a change in state of the input to the reset processor 603. Insome embodiments, other inputs to the reset processor 603 can be used toassist in determining the duration of the reset period (i.e., how longthe reset control signal will keep the reset circuit 704 in the activestate).

When the reset circuit 704 is active (i.e., during the reset period),the output of the switch driver 305 is disconnected from the gate of theFET 301 by the series reset switch and shorted to a reference potentialinput 705 through the shunt reset switch 708. The reference potentialinput may be coupled to a known reference potential between V_(DD) andV_(SS), such as ground. Therefore, any accumulated charge at the gate ofthe FET 301 is provided a low resistance path to the referencepotential. Consequently, most of the charge accumulated at the gate ofthe FET 301 is removed (i.e., the gate is placed at the referencepotential). At the end of the reset period, the shunt switch 708 isopened and the series reset switch 706 is closed, placing the resetcircuit 704 back in the inactive state and allowing the switch driver305 to drive the gate of the FET 301 to V_(SS), thus turning the FET 301off. In some embodiments, the reference potential is ground.

By resetting the gate of the FET 301 before the switch driver isattempts to drive the gate to V_(SS), the reset circuit 704 assists inattaining the V_(SS) potential at the gate of the FET 301 (and theoutput of the switch driver 305) by first placing the gate at thereference potential. Accordingly, at the end of the reset period, whenthe reset circuit 704 is returned to the inactive state, the switchdriver 305 only has to drive the gate of the FET 301 from the referencepotential (i.e., ground or another voltage level between V_(DD) andV_(SS)) to V_(SS). Resetting the gate significantly reduces the load onthe output of the switch driver 305, thus reducing the rise in V_(SS) asthe switch driver 305 attempts to drive the gate of the FET 301 toV_(SS).

FIG. 8 is an illustration of the positive impact of resetting the gateof the FET 301 (and each of the FETs in the other switches 608, 610, 614as desired). A plot 902 of V_(SS) shows a reduction in amount of timeV_(SS) rises compared with that show in FIG. 4, due to the reducedloading on the V_(SS) power supply. That is, by resetting the gate ofthe FET 301, the amount of charge at the output of the switch driver 305is reduced, thus the amount of time V_(SS) rises is smaller.Furthermore, it can be seen from the plot 904 that the gate voltage willmore rapidly achieve a level that allows the switches to attain theirdesired state more quickly. The resulting “turn off time” between t₁ andt₂″ in FIG. 8 is substantially less than the turn off time between timet₁ and t₂′ shown in FIG. 4. It should be noted that while the discussionabove focused on the switch branch 612, in some embodiments, such areset circuit 704 is provided in each of the switch branches 608, 610,614.

Furthermore, in some embodiments, the reset circuit 704 is alsomomentarily activated when the switch control signal switches from a lowstate to a high state. FIG. 9 shows plots of the logical state of theswitch control signal 1002, the reset switch control signal 1004, theseries reset switch 1006 and the shunt reset switch 1008. In this case,the gate of the FET 301 will be transitioning from a low to a highvoltage (e.g., from V_(SS) to V_(DD)). As in FIG. 7, FIG. 9 merely showsthe logical state of the switch control signal and not the voltage. Insome cases, the positive voltage supply providing V_(DD) is strongenough to resist the loading at the output of the switch driver 305 whendriving the output to V_(DD), making it unnecessary to reset the FET 301when the gate is being driven high. However, in some cases it may bebeneficial to reset the gate of the FET 301 both when driving the gatehigh as well as when driving it low. As shown in FIG. 9, the FET 301 isreset when the switch control signal goes high by toggling the resetswitch control signal momentarily low. When the reset switch controlsignal is low, the series reset switch is open and the shunt resetswitch is closed. Accordingly, the gate of the FET 301 is shunted toground when the reset switch control signal is low. Once the resetswitch control signal returns to the high logic state (reset circuit 704inactive), the output of the driver 305 is once again connected to thegate of the FET 301.

Methods

Another aspect of the invention includes a method shown in FIG. 10 forimproving the switching speed of a switch, including:

-   -   changing the state of the switch by changing the logic level to        the input of a driver, the driver having an output coupled to        the gate of a transistor (such as a FET) (STEP 1001);    -   disconnecting the output of the driver from the gate of the        transistor over a reset period (STEP 1003);    -   coupling the gate of the transistor to a known potential that is        between the high potential power supply and the low potential        power supply applied to the driver during the reset period (STEP        1005);    -   disconnecting the gate of the transistor from the known        potential at the end of the reset period (STEP 1007); and    -   connecting the gate of the transistor to the output of the        driver at the end of the reset period (STEP 1009).        The duration of the reset period is dependent upon the number of        FETs in the stack and the size of the FETs within the switch        branch in which the reset circuit resides. In some embodiments,        a reset time of approximately 100 to 150 ns is appropriate.

Fabrication Technologies and Options

The term “MOSFET” means any transistor that has an insulated gate whoseto source voltage determines the conductivity of the transistor.

Various embodiments can be implemented to meet a wide variety ofspecifications. Unless otherwise noted above, selection of suitablecomponent values is a matter of design choice. Various embodiments ofthe disclosed method and apparatus may be implemented in any suitable ICtechnology (including but not limited to MOSFET structures), or inhybrid or discrete circuit forms. Integrated circuit embodiments may befabricated using any suitable substrates and processes, including butnot limited to standard bulk silicon, silicon-on-insulator (SOI),silicon-on-sapphire (SOS) bipolar, GaAs HBT, GaN HEMT, GaAs pHEMT, andMESFET technologies.

A number of embodiments of the disclosed method and apparatus have beendescribed. It is to be understood that various modifications may be madewithout departing from the spirit and scope of the claimed invention.For example, some of the steps described above may be optional. Variousactivities described with respect to the methods identified above can beexecuted in repetitive, serial, or parallel fashion. Voltage levels maybe adjusted or voltage and/or logic signal polarities reversed dependingon a particular specification and/or implementing technology (e.g.,NMOS, PMOS, or CMOS, and enhancement mode or depletion mode transistordevices). Component voltage, current, and power handling capabilitiesmay be adapted as needed, for example, by adjusting device sizes,serially “stacking” components (particularly FETs) to withstand greatervoltages, and/or using multiple components in parallel to handle greatercurrents. Additional circuit components may be added to enhance thecapabilities of the disclosed circuits and/or to provide additionalfunctional without significantly altering the functionality of thedisclosed circuits.

It is to be understood that the foregoing description is intended toillustrate and not to limit the scope of the invention, which is definedby the scope of the following claims, and that other embodiments arewithin the scope of the claims. (Note that the parenthetical labels forclaim elements are for ease of referring to such elements, and do not inthemselves indicate a particular required ordering or enumeration ofelements; further, such labels may be reused in dependent claims asreferences to additional elements without being regarded as starting aconflicting labeling sequence).

What is claimed is:
 1. A switch branch comprising: (a) a field effecttransistor (FET) coupled between a switch branch input and a switchbranch output, the FET having a gate controlled by a gate signal; (b) aswitch control input configured to receive control signals to be appliedto the gate of the FET; (c) a reset circuit coupled between the switchcontrol input and the gate of the FET and configured to reduce, inresponse to a change in state of a signal applied to the switch controlinput, positive or negative charge accumulated on the gate of the FETand then to couple the switch control input to the gate of the FET. 2.The switch branch of claim 1, wherein the FET includes two or more FETscoupled in series between the switch branch input and the switch branchoutput, each FET having a gate controlled by a common gate signal. 3.The switch of claim 1, wherein the reset circuit includes a seriesswitch coupled to the gate of the FET, and further comprising a drivercoupled between the switch control input and the series switch of thereset circuit such that, when the series switch is closed, a signalapplied to the switch control input is coupled to the gate of the FET.4. The switch of claim 1, wherein the change in state of the signalapplied to the switch control input is from a high level to a low level.5. The switch of claim 1, wherein the change in state of the signalapplied to the switch control input is from a low level to a high level.6. A switch branch comprising: (a) a field effect transistor (FET)coupled between a switch branch input and a switch branch output, theFET having a gate controlled by a gate signal; (b) a switch controlinput; (c) a reset circuit coupled between the switch control input andthe gate of the FET and having a reference potential input and a resetcontrol port; wherein the reset circuit couples the gate of the FET tothe reference potential input during a reset period defined by a resetpulse received through the reset control port, wherein the reset pulseis generated in response to a change in state of a signal applied to theswitch control input; and wherein the reset circuit couples the gate ofthe FET to the switch control input after the reset period.
 7. Theswitch branch of claim 6, wherein, during the reset period, the resetcircuit reduces positive or negative charge accumulated on the gate ofthe FET.
 8. The switch branch of claim 6, wherein the FET includes twoor more FETs coupled in series between the switch branch input and theswitch branch output, each FET having a gate controlled by a common gatesignal.
 9. The switch of claim 6, further comprising a driver coupledbetween the switch control input and the signal input of the resetcircuit.
 10. The switch of claim 9, wherein the driver is coupled to apositive power supply and to a negative power supply, and the referencepotential input is coupled to a reference potential between thepotential of the negative and positive power supplies.
 11. The switch ofclaim 10, wherein the reference potential is ground.
 12. The switch ofclaim 6, wherein the change in state of the signal applied to the switchcontrol input is from a high level to a low level.
 13. The switch ofclaim 6, wherein the change in state of the signal applied to the switchcontrol input is from a low level to a high level.
 14. A switch branchcomprising: (a) a switch input; (b) a switch output; (c) at least onefield effect transistor (FET) series-coupled between the switch inputand the switch output, each FET having a gate controlled by a commongate signal; (d) a switch control input; (e) a reset circuit including:(1) a signal input coupled to the switch control input; (2) a signaloutput coupled to the gate of the at least one FET; (3) a referencepotential input; (4) a reset control port; (5) a series switch coupledbetween the signal input and the signal output; and (6) a shunt switchcoupled between the signal output and the reference potential input;wherein the reset circuit closes the shunt switch and opens the seriesswitch in response to a reset pulse applied to the reset control port inresponse to a change in state of a signal applied to the switch controlinput; and wherein the reset circuit opens the shunt switch and closesthe series switch in the absence of the reset pulse.
 15. The switch ofclaim 14, further comprising a driver coupled between the switch controlinput and the signal input of the reset circuit.
 16. The switch of claim15, wherein the driver is coupled to a positive power supply and to anegative power supply, and the reference potential input is coupled to areference potential between the potential of the negative and positivepower supplies.
 17. The switch of claim 16, wherein the referencepotential is ground.
 18. The switch of claim 14, wherein the change instate of the signal applied to the switch control input is from a highlevel to a low level.
 19. The switch of claim 14, wherein the change instate of the signal applied to the switch control input is from a lowlevel to a high level.
 20. The switch of claim 14, wherein the resetpulse has a duration of between about 100 ns and about 150 ns.